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FDAF62N28 280V N-Channel MOSFET
October 2006
FDAF62N28
280V N-Channel MOSFET Features
* 36A, 280V, RDS(on) = 0.051 @VGS = 10 V * Low gate charge ( typical 77 nC) * Low Crss ( typical 83 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability
UniFET
Description
TM
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
D
G GDS
TO-3PF
FDAF Series
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C
(Note 2) (Note 1) (Note 1) (Note 3)
Parameter
- Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed
(Note 1)
FDAF62N28
280 36 22 144 30 1919 36 16.5 4.5 165 1.3 -55 to +150 300
Unit
V A A A V mJ A mJ V/ns W W/C C C
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
Thermal Characteristics
Symbol
RJC RJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Min.
---
Max.
0.75 40
Unit
C/W C/W
(c)2006 Fairchild Semiconductor Corporation
1
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FDAF62N28 Rev. A
FDAF62N28 280V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FDAF62N28
Device
FDAF62N28
Package
TO-3PF
TC = 25C unless otherwise noted
Reel Size
-
Tape Width
-
Quantity
30
Electrical Characteristics
Symbol
Off Characteristics BVDSS BVDSS / TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr
NOTES:
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Conditions
VGS = 0V, ID = 250A ID = 250A, Referenced to 25C VDS = 280V, VGS = 0V VDS = 224V, TC = 125C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 18A VDS = 40V, ID = 18A VDS = 25V, VGS = 0V, f = 1.0MHz
(Note 4)
Min.
280 -----3.0 ------
Typ.
-0.28 -----0.043 51 3560 730 83 90 560 110 220 77 25 41
Max Units
--1 10 100 -100 5.0 0.051 -4630 950 120 190 1130 230 450 100 --V V/C A A nA nA V S pF pF pF ns ns ns ns nC nC nC
On Characteristics
Dynamic Characteristics
Switching Characteristics VDD = 140V, ID = 62A RG = 25
(Note 4, 5)
------(Note 4, 5)
VDS = 224V, ID = 62A VGS = 10V
--
Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 36A VGS = 0V, IS = 62A dIF/dt =100A/s
(Note 4)
------
---236 6.1
36 144 1.4 ---
A A V ns C
1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 2.4mH, IAS = 36A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 36A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
FDAF62N28 Rev. A
2
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FDAF62N28 280V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
10
2
ID, Drain Current [A]
ID, Drain Current [A]
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top :
10
2
10
1
150 C
10
1
o
25 C
o
-55 C
Notes : 1. VDS = 40V 2. 250 s Pulse Test
o
10
0
Notes : 1. 250 s Pulse Test 2. TC = 25
-1
10
10
0
10
1
10
0
2
4
6
8
10
12
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue
0.10 0.09 0.08 0.07 0.06
RDS(ON) [ ], Drain-Source On-Resistance
VGS = 10V
IDR, Reverse Drain Current [A]
10
2
VGS = 20V
0.05 0.04
Note : TJ = 25
10
1
150 25
Notes : 1. VGS = 0V 2. 250 s Pulse Test
0.03
0
25
50
75
100
125
150
175
200
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
12
9000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 6. Gate Charge Characteristics
VGS, Gate-Source Voltage [V]
10
VDS = 56V VDS = 140V VDS = 224V
Coss
Capacitances [pF]
6000
8
Ciss
6
3000
4
Crss
Note ; 1. VGS = 0 V 2. f = 1 MHz
2
Note : ID = 62A
0 -1 10
0
10
0
10
1
0
10
20
30
40
50
60
70
80
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
FDAF62N28 Rev. A
3
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FDAF62N28 280V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
Figure 8. On-Resistance Variation vs. Temperature
3.0
BVDSS, (Normalized) Drain-Source Breakdown Voltage
1.1
RDS(ON), (Normalized) Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
Notes : 1. VGS = 10 V 2. ID = 18 A
0.9
Notes : 1. VGS = 0 V 2. ID = 250 A
0.5
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case Temperature
40
10
2
10 s 100 s 1 ms 10 ms 100 ms
Operation in This Area is Limited by R DS(on)
ID, Drain Current [A]
30
10
1
DC
ID, Drain Current [A]
20
10
0
Notes :
10
-1
1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
o
10
10
-2
10
0
10
1
10
2
0 25
50
75
100
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature [ ]
Figure 11. Transient Thermal Response Curve
10
0
D =0.5
Z JC Thermal Response (t),
0.2
10
-1
0.1 0.05 0.02 0.01
N otes : 1. Z JC = 0.75 (t) /W M ax. 2. D uty F actor, D =t 1 /t 2 3. T JM - T C = P DM * Z JC (t)
PDM
single pulse
10
-2
t1
t2
10
0
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
t 1 , S quare W ave P ulse D uration [sec]
FDAF62N28 Rev. A
4
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FDAF62N28 280V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDAF62N28 Rev. A
5
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FDAF62N28 280V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FDAF62N28 Rev. A
6
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FDAF62N28 280V N-Channel MOSFET
Mechanical Dimensions (Continued)
TO-3PF
5.50 0.20 4.50 0.20 15.50 0.20 o3.60 0.20 3.00 0.20 (1.50)
10.00 0.20
10
26.50 0.20
23.00 0.20
16.50 0.20
14.50 0.20
0.85 0.03 16.50 0.20 2.00 0.20 1.50 0.20
14.80 0.20
2.00 0.20 2.00 0.20 4.00 0.20 0.75 -0.10
+0.20
2.00 0.20
2.50 0.20
2.00 0.20
3.30 0.20
5.45TYP [5.45 0.30]
5.45TYP [5.45 0.30]
0.90 -0.10
+0.20
3.30 0.20
2.00 0.20
5.50 0.20
Dimensions in Millimeters
FDAF62N28 Rev. A
7
22.00 0.20
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FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I21

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